High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector
Identifieur interne : 00DF19 ( Main/Repository ); précédent : 00DF18; suivant : 00DF20High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector
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Abstract
Normal incidence InAs/In0.15Ga0.85As dots-in-a-well detectors operating at T=78 K with λp∼7.2 μm and a spectral width (Δλ/λ) of 35% are reported. The peak at 7.2 μm is attributed to the bound-to-bound transitions between the ground state of the dot and the states within the InGaAs well. A broad shoulder around 5 μm, which is attributed to the bound-to-continuum transition, is also observed. Calibrated blackbody measurements at a device temperature of 78 K yield a peak responsivity of 3.58 A/W (Vb=-1 V), peak detectivity=2.7×109 cmHz1/2/W (Vb=-0.3 V), conversion efficiency of 57% and a gain ∼25. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As dots-in-a-well detector</title><author><name sortKey="Raghavan, S" uniqKey="Raghavan S">S. Raghavan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, Maryland 20783</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi</wicri:cityArea></affiliation></author><author><name sortKey="Rotella, P" uniqKey="Rotella P">P. Rotella</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Stintz, A" uniqKey="Stintz A">A. Stintz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Fuchs, B" uniqKey="Fuchs B">B. Fuchs</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Krishna, S" uniqKey="Krishna S">S. Krishna</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Morath, C" uniqKey="Morath C">C. Morath</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base, New Mexico 87117</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base</wicri:cityArea></affiliation></author><author><name sortKey="Cardimona, D A" uniqKey="Cardimona D">D. A. Cardimona</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base, New Mexico 87117</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base</wicri:cityArea></affiliation></author><author><name sortKey="Kennerly, S W" uniqKey="Kennerly S">S. W. Kennerly</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0419214</idno><date when="2002-08-19">2002-08-19</date><idno type="stanalyst">PASCAL 02-0419214 AIP</idno><idno type="RBID">Pascal:02-0419214</idno><idno type="wicri:Area/Main/Corpus">00EB80</idno><idno type="wicri:Area/Main/Repository">00DF19</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared detectors</term><term>Quantum well devices</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560G</term><term>0757K</term><term>7867H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Dispositif puits quantique</term><term>Détecteur IR</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Normal incidence InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As dots-in-a-well detectors operating at T=78 K with λ<sub>p</sub>∼7.2 μm and a spectral width (Δλ/λ) of 35% are reported. The peak at 7.2 μm is attributed to the bound-to-bound transitions between the ground state of the dot and the states within the InGaAs well. A broad shoulder around 5 μm, which is attributed to the bound-to-continuum transition, is also observed. Calibrated blackbody measurements at a device temperature of 78 K yield a peak responsivity of 3.58 A/W (V<sub>b</sub>=-1 V), peak detectivity=2.7×10<sup>9</sup> cmHz<sup>1/2</sup>/W (V<sub>b</sub>=-0.3 V), conversion efficiency of 57% and a gain ∼25. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As dots-in-a-well detector</s1></fA08><fA11 i1="01" i2="1"><s1>RAGHAVAN (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>ROTELLA (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>STINTZ (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>FUCHS (B.)</s1></fA11><fA11 i1="05" i2="1"><s1>KRISHNA (S.)</s1></fA11><fA11 i1="06" i2="1"><s1>MORATH (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>CARDIMONA (D. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>KENNERLY (S. W.)</s1></fA11><fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base, New Mexico 87117</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, Maryland 20783</s1></fA14><fA20><s1>1369-1371</s1></fA20><fA21><s1>2002-08-19</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0419214</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Normal incidence InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As dots-in-a-well detectors operating at T=78 K with λ<sub>p</sub>∼7.2 μm and a spectral width (Δλ/λ) of 35% are reported. The peak at 7.2 μm is attributed to the bound-to-bound transitions between the ground state of the dot and the states within the InGaAs well. A broad shoulder around 5 μm, which is attributed to the bound-to-continuum transition, is also observed. Calibrated blackbody measurements at a device temperature of 78 K yield a peak responsivity of 3.58 A/W (V<sub>b</sub>=-1 V), peak detectivity=2.7×10<sup>9</sup> cmHz<sup>1/2</sup>/W (V<sub>b</sub>=-0.3 V), conversion efficiency of 57% and a gain ∼25. © 2002 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B00G57K</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H67H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>0757K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7867H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dispositif puits quantique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Quantum well devices</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Détecteur IR</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Infrared detectors</s0></fC03><fN21><s1>238</s1></fN21><fN47 i1="01" i2="1"><s0>0233M000096</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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